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| DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features * Low RDS(ON): * 40 m @VGS = -4.5V * 70 m @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Mechanical Data * * * * * * * * SC-59 Drain NEW PRODUCT * * * * Case: SC-59 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.008 grams (approximate) D Gate Source G S TOP VIEW Internal Schematic Pin Configuration Maximum Ratings @TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 70C ID IDM IS Value -20 12 -4.6 -3.7 -18 2.0 Unit V V A A A Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range Notes: Symbol PD RJA TJ, TSTG Value 1.25 100 -55 to +150 Unit W C/W C 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP2066LSN Document number: DS31467 Rev. 3 - 2 1 of 4 www.diodes.com August 2008 (c) Diodes Incorporated DMP2066LSN Electrical Characteristics Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 5) Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) Maximum Body-Diode Continuous Current (Note 1) DYNAMIC PARAMETERS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) ID (ON) RDS (ON) gFS VSD IS Ciss Coss Crss RG QG QGS QGD td(on) tr td(off) tf Min -20 -0.6 -15 -0.5 Typ -0.96 29 55 9 -0.72 820 200 160 2.5 10.1 1.5 4.3 4.4 9.9 28.0 23.4 Max -1 100 -1.2 40 70 -1.4 1.7 Unit V A nA V A m S V A pF pF pF Test Condition ID = -250A, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = 12V VDS = VGS, ID = -250A VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A VDS = -10V, ID = -4.5A IS = -2.1A, VGS = 0V VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V f = 1.0MHz VDS = -10V, VGS = -4.5V, ID = -4.5A TJ = 25C NEW PRODUCT nC ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0 5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing. 30 VGS = 10V VGS = 4.5V 20 VDS = 5.0V 24 ID, DRAIN CURRENT (A) 16 ID , DRAIN CURRENT (A) 18 VGS = 3.0V 12 12 8 VGS = 2.5V 6 VGS = 2.0V VGS = 1.5V 4 TA = 150C TA = 125C T A = 85C TA = 25C TA = -55C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 DMP2066LSN Document number: DS31467 Rev. 3 - 2 2 of 4 www.diodes.com August 2008 (c) Diodes Incorporated DMP2066LSN RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 0.08 VGS = 4.5V 0.06 TA = 150C TA = 125C NEW PRODUCT 0.1 VGS = 2.5V 0.04 TA = 85C TA = 25C TA = -55C VGS = 4.5V VGS = 10V 0.02 0.01 0 6 12 18 24 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0 0 12 18 24 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 6 30 1.6 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 2.0 VGS = 10V ID = 10A 1.6 1.2 VGS = 4.5V ID = 5A 1.2 ID = 1mA 1.0 0.8 ID = 250A 0.8 0.4 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Normalized On-Resistance vs. Ambient Temperature 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 10,000 20 T A = 25C 16 IS, SOURCE CURRENT (A) 12 CT, TOTAL CAPACITANCE (pF) f = 1MHz 1,000 Ciss 8 4 Coss Crss 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 1.2 100 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 DMP2066LSN Document number: DS31467 Rev. 3 - 2 3 of 4 www.diodes.com August 2008 (c) Diodes Incorporated DMP2066LSN Ordering Information Part Number DMP2066LSN-7 Notes: (Note 7) Case SC-59 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information PS4 = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September PS4 Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 May 5 YM 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D Package Outline Dimensions A Dim A TOP VIEW BC G H K N J M D L SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 8 0 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2066LSN Document number: DS31467 Rev. 3 - 2 4 of 4 www.diodes.com August 2008 (c) Diodes Incorporated |
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